The world of technology is ever changing. Wide bandgap power semiconductor devices like Silicon Carbide (SiC) MOSFETs are enjoying growing popularity in many modern power electronic applications like E-mobility and renewable energy. Their extremely fast switching speed capability helps to increase efficiency and reduce the overall size and cost of the system. However, fast switching together with high operating voltages and increasing switching frequencies presents important challenges to the gate driver system. Rugged galvanic isolation, compliance with safety standards, control signal noise immunity and EMI performance- Those are just some of the most important aspects that designers need to consider. An optimal design of the isolated auxiliary supply providing the voltage and current levels to drive the SiC or GaN device is critical to help the full gate driver system meet the many requirements set by state-of-the-art applications. And today we're going to explore this design. Download the Application Note here. https://www.we-online.com/components/media/o190156v410%20ANP082b%20EN.pdf

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